TITLE

Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium

AUTHOR(S)
Courmont, S.; Maurel, Ph.; Grattepain, C.; Garcia, J. Ch.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1371
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the p-type doping of gallium indium phosphide films grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium (Cp[sub 2]Mg). Details on the hole concentrations at 550 degree Celsius; Relationship of magnesium incorporation with Cp[sub 2]Mg flow rate; Effect of substrate temperature on doping concentration.
ACCESSION #
4289582

 

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