Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium

Courmont, S.; Maurel, Ph.; Grattepain, C.; Garcia, J. Ch.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1371
Academic Journal
Examines the p-type doping of gallium indium phosphide films grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium (Cp[sub 2]Mg). Details on the hole concentrations at 550 degree Celsius; Relationship of magnesium incorporation with Cp[sub 2]Mg flow rate; Effect of substrate temperature on doping concentration.


Related Articles

  • Laser reactivation of Room- Tc ferromagnetism in Mn-doped insulating TiO2 thin films. Xu, L. M.; Xing, X. J.; Yang, M.; Li, X. Y.; Wu, S. X.; Hu, P.; Lu, J. Q.; Li, S. W. // Applied Physics A: Materials Science & Processing;Feb2010, Vol. 98 Issue 2, p417 

    Room- Tc ferromagnetic insulating Mn-doped TiO2 thin films were prepared by plasma assisted molecular beam epitaxy (PAMBE). The thin films show obvious decay of ferromagnetism when aged in air at room temperature for one year without any special treatment. A distinct reactivation of...

  • Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films. Hobart, K.D.; Godbey, D.J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p76 

    Investigates the post-growth annealing of low temperature-grown antimony (Sb)-doped silicon molecular beam epitaxial films. Ways to monitor the replication of substrate temperature; Indications of the increase in carrier density and reduction in mobility at the highest annealing temperature;...

  • Unusual transport and magnetic properties of Tb-doped YBa2Cu3O7 single crystals and epitaxial thin films. Cao, G.; O’Reilly, J. W.; Crow, J. E.; Kennedy, R. J.; Nichols, D. H. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6328 

    Deals with a study which determined the transport and magnetic properties of terbium-doped YBa[sub2]Cu[sub3]O[sub7] single crystals and epitaxial thin films. Background to the study; Results; Discussion.

  • Effects of impurities Si and Be on the creation of Ga vacancies and Ga interstitials in GaAs... Jong-Lam Lee; Long Wei; Tanigawa, Shoichiro; Kawabe, Mitsuo // Applied Physics Letters;4/8/1991, Vol. 58 Issue 14, p1524 

    Studies the effects of impurities Si and Be on the creation of Ga vacancies and Ga interstitials in GaAs grown by molecular beam epitaxy. Growth of the undoped and Si-doped GaAs layers on a Be-doped epilayer; Decrease in the concentration of V[sub Ga] created from the surface of the undoped...

  • P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation,.... Rubin, M.; Newman, N.; Chan, J.S.; Fu, T.C.; Ross, J.T. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p64 

    Examines the generation of p-type conduction in ion-beam molecular beam epitaxy gallium nitride thin films by a variety of doping methods. Importance of doping concentration control in the development of wide band gap semiconductors; Determination of carrier concentration and mobility;...

  • Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films. Wei, Z. P.; Yao, B.; Wang, X. H.; Zhang, Z. Z.; Lu, Y. M.; Shen, D. Z.; Li, B. H.; Zhang, J. Y.; Zhao, D. X.; Fan, X. W.; Tang, Z. K. // Journal of Materials Research;Oct2007, Vol. 22 Issue 10, p26 

    A wurtzite nitrogen-doped MgZnO (MgZnO:N) film was grown by plasma-assisted molecular-beam epitaxy (PAMBE) on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown film shows n-type conduction at room temperature, but transforms into p-type conduction after...

  • Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga. Makino, T.; Segawa, Y.; Yoshida, S.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M. // Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p759 

    We investigated the optical properties of epitaxial n-type ZnO films grown on lattice-matched ScAlMgO4 substrates. As the Ga doping concentration increased up to 6×1020 cm-3, the absorption edge showed a systematic blueshift, consistent with the Burstein–Moss effect. A bright...

  • Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment. Park, Tae Joo; Kim, Jeong Hwan; Seo, Min Ha; Jang, Jae Hyuck; Hwang, Cheol Seong // Applied Physics Letters;4/9/2007, Vol. 90 Issue 15, p152906 

    The influence of thick (1.4 nm) and thin (0.6 nm) SiO2 interfacial layers grown by an O3 predeposition treatment during atomic layer deposition of high-k HfO2 films on the thermal stability and chemical structure of the film was investigated. It was found that the HfO2/thick SiO2 stack...

  • Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers. Liu, Zhengxin; Suzuki, Yasuhito; Osamura, Masato; Ootsuka, Teruhisa; Mise, Takahiro; Kuroda, Ryo; Tanoue, Hisao; Makita, Yunosuke; Wang, Shinan; Fukuzawa, Yasuhiro; Otogawa, Naotaka; Nakayama, Yasuhiko // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4019 

    We fabricated continuous highly (110)/(101)-oriented β-FeSi2 films on Si (111) substrates by the facing-target sputtering method. An epitaxial thin β-FeSi2 template buffer layer preformed on the silicon substrate was found to be essential in the epitaxial growth of thick β-FeSi2 films....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics