Lateral p-n junctions in metal-organic vapor-phase epitaxy of AlGaAs lasers on GaAs substrates

Wang, T.Y.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1368
Academic Journal
Examines the formation of lateral p-n junctions in aluminum gallium arsenide lasers grown on gallium arsenide substrates by metalorganic vapor phase epitaxy. Presence of a current-blocking layer on the lasers; Formation of conducting channels over the etched ridges of the substrates; Confirmation of the formation by electron-beam-induced junction current.


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