TITLE

Correlation of surface morphology with luminescence of porous Si films by scanning tunneling

AUTHOR(S)
Enachescu, M.; Hartmann, E.; Koch, F.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1365
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the evolution of visible photoluminescence of porous silicon films. Study of surface structure on a nanometer scale; Use of scanning tunneling microscopy; Preparation of samples under several conditions; Correlation between surface morphology and luminescence.
ACCESSION #
4289580

 

Related Articles

  • Blocking effect of charge transfer at the porous silicon/silicon interface. Dittrich, Th.; Rappich, J. // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2705 

    Investigates the photoluminescence (PL) of a thin porous silicon surface layer. Influence of the absorption of used pulsed nitrogen[sub 2] laser on the porous silicon surface layer; Information on the radiative recombination and PL intensity of porous silicon; Effects of an ethanol atmosphere...

  • Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects. Wu, X.L.; Gu, Y. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p707 

    Examines the photoluminescence (PL) spectra of porous silicon (PS) coated with germanium (Ge) films using argon (Ar) laser. Energy range of the material; Maximal intensity; Identification of PL origin.

  • Photoluminescence and Auger spectroscopy of porous Si: Solvent, reactive ion etching, annealing, and substrate boron level effects. Shinar, R.; Robinson, D. S.; Partee, J.; Lane, P. A.; Shinar, J. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3403 

    Presents information on a study which described the photoluminescence of boron-doped porous silicon films and reactive ion etched films. Experimental procedure; Results; Discussion.

  • Hydrostatic pressure effects on the optical transitions in the free-standing porous silicon film.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p346 

    Examines the effect of hydrostatic pressure on the absorption and photoluminescence spectra of free-standing porous silicon film. Anodization in hydrogen-fluoride solution; Sensitivity of the polychromator-camera system; Pressure in the diamond anvil cell.

  • Photoemission study of porous silicon. Roy, A.; Chainani, A. // Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1655 

    Examines the photoemission of the porous silicon film (PSF). Composition of the subsurface regions; Possibility of the existence of hydrogen in the composition; Influence of the PSF on the visible photoluminescence.

  • Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate. Lajnef, Mohamed; Bardaoui, Afrah; Sagne, Isabelle; Chtouroua, Radwan; Ezzaouia, Hatem // American Journal of Applied Sciences;2008, Vol. 5 Issue 5, p605 

    GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is...

  • Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing. Gelloz, B.; Shibata, T.; Koshida, N. // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p191103 

    Electroluminescence (EL) and electrical properties of nanocrystalline porous silicon (PS) diodes have been sufficiently improved by introducing high pressure water vapor annealing into the active PS layer. The EL emission is significantly enhanced without affecting the operating voltage. In...

  • Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon. Solomon, I.; Rerbal, K.; Chazalviel, J.-N.; Ozanam, F.; Cortès, R. // Journal of Applied Physics;Apr2008, Vol. 103 Issue 8, p083108 

    We report the preparation of highly photoluminescent porous silicon in the form of thin films with thicknesses of around 1 μm. These films are obtained by stain etching thin films of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition with a flow of silane gas...

  • ESTUDIO DE FOTOLUMINISCENCIA EN PELÍCULAS DELGADAS DE SILICIO POROSO PREPARADAS POR ANODIZACIÓN ELECTROQUÍMICA. Torres, J.; Castillejo, F. E.; López Carreño, L. D.; Alfonso, J. E. // Revista Colombiana de Física;2006, Vol. 38 Issue 2, p513 

    Porous silicon thin films were prepared using the electrochemical, anodization method. Samples were produced using as electrolyte a solution of HF (25 %) v/v and isopropyl alcohol. (100), p type silicon substrates of resistivities 0.01, 0.1, and 1 Ω-cm were used. Samples were prepared using...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics