Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical

Wei Zhang; Vargas, Roberto; Goto, Takashi; Someno, Yoshihiro; Hirai, Toshio
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1359
Academic Journal
Presents a method for the epitaxial growth of aluminum nitride films. Use of electron cyclotron resonance plasma-assisted chemical vapor deposition; Gas system and substrate temperatures used in the process; Epitaxial relationship between the films and substrates.


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