Pd/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

Jiun-Tsuen Lai; Ya-Min Lee, Joseph
January 1994
Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p229
Academic Journal
Examines the generation of palladium/germanium ohmic contact to n-type gallium arsenide (GaAs) using rapid thermal annealing. Observation of Ga dissociation from GaAs; Association between Ga secondary ion mass spectrometry signal bump and ohmic contact behavior; Measurement of specific contact resistivity by transmission line model.


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