Feasibility of the artificial ultrahigh mobility materials

Li, S.; Khurgin, J.B.
January 1994
Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p208
Academic Journal
Examines the achievement of higher electron mobility in the modulation-doped narrow barrier superlattice. Proposal of a high transconductance field-effect transistor; Comparison of electron effective mass size between superlattice and bulk materials; Disappearance of mobility gap with increasing temperature.


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