TITLE

Thermal velocity limits to diffusive electron transport in thin-base np[sup +]n GaAs bipolar

AUTHOR(S)
Harmon, E.S.; Melloch, M.R.; Lundstrom, M.S.; Cardone, F.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the limitation of electron transport across a thin gallium arsenide bipolar transistor by electron thermal velocity. Fabrication of the transistors through wet chemical etching; Reflection of layer quality with the mobility degree; Indication of quasiballistic transport; Impact of impurity doping on electron-hole scattering.
ACCESSION #
4289545

 

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