Reduction of secondary defects in BF[sub 2] implanted Si(100) by ion beam defect engineering

Qing-tai Zhao; Zhong-lie Wang; Tian-bing Xu; Pei-ran Zhu; Jun-si Zhou
January 1994
Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p175
Academic Journal
Examines the reduction of secondary defects in BF[sub 2] implanted silicon (100) by backscattering and channeling technique. Secondary defects with high densities following thermal annealing; Defects created by ion irradiation; Improvement of p-n junction electrical properties.


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