TITLE

Hybrid Si molecular beam epitaxial regrowth for a strained Si[sub 1-x]Ge/Si

AUTHOR(S)
Kato, Y.; Fukatsu, S.; Usami, N.; Shiraki, Y.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2414
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the regrowth of a silicon contact layer by hybrid molecular beam epitaxy (MBE). Fabrication of an electroluminescent device; Effect of outgassing the sample in a solid source MBE chamber; Impact of exposure to air on the single-quantum well structure; Spectral features of the electroluminescence and photoluminescence of the device.
ACCESSION #
4289510

 

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