High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures

Hirayama, Y.; Tarucha, S.
October 1993
Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2366
Academic Journal
Examines the transport characteristics of an AlGaAs/InGaAs/GaAs four-terminal structures by focused ion beam scanning. Comparison of the negative peak of the bend resistance and the magnetic field curve; Indication of the temperature dependence of the negative peak amplitude of the structure; Effect of thermal broadening of the electron energy on the system.


Related Articles

  • Studies of transport scaling and reduction under feedback. Chiu, J. S.; Sen, A. K. // Physics of Plasmas;Aug97, Vol. 4 Issue 8, p2933 

    Discusses studies of transport scaling and reduction under feedback. Columbia Linear Machine and its remote beam suppressor; Measurement of particle transport; Effect of the feedback on the density fluctuations.

  • Wire-guided transport of intense ion beams. Watrous, J. J.; Mosher, D.; Neri, J. M.; Ottinger, P. F.; Olson, C. L.; Crow, J. T.; Peterson, R. R. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p639 

    Provides information on a study which evaluated a wire-guided transport system that uses the azimuthal magnetic field, produced by a current driven through a thin wire, to radially confine the ion beam. Requirement for light ion inertial confinement fusion; Reason for the contact between ions...

  • Transportation of intensive ion beams (invited) (abstract). Soloshenko, I. A. // Review of Scientific Instruments;Feb1998, Vol. 69 Issue 2, p1088 

    Describes the transportation of intensive ion beams. Considerations for the excitation of ion oscillations in a plasma of fast positive ion beams; Influence of the oscillations on the beam transport properties; Stabilization of oscillation in compensated ion beams.

  • One-dimensional GaAs wires fabricated by focused ion beam implantation. Hiramoto, Toshiro; Hirakawa, Kazuhiko; Iye, Yasuhiro; Ikoma, Toshiaki // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1620 

    We have developed a novel, simple technique for fabrication of one-dimensional GaAs wires by utilizing only a focused ion beam (FIB) technology. The FIB implantation forms high-resistive regions which confine an n+ channel into a very narrow conductive wire. The minimum width of the GaAs wire...

  • High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up.... Ou, S.S.; Jansen, M.; Yang, J.J.; Sergant, M. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1037 

    Demonstrates the operation of a GaAs/GaAlAs surface-emitting laser mounted in the junction-up configuration. Fabrication of the device mirrors by ion beam etching and reactive ion beam etching; Measurement of the typical threshold current density and external differential efficiencies from the...

  • Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs. Klatt, J.L.; Averback, R.S. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p976 

    Examines the ion beam mixing of aluminum arsenide (AlAs) semiconductors in gallium arsenide (GaAs) and GaAs markers in AlAs as a function of irradiation temperature. Values of the different matrix mixing parameter at varied temperatures; Influence of crystal structure on ion beam mixing;...

  • Electrically active defect centers induced by Ga[sup +] focused ion beam irradiation of GaAs(100). Brown, S.J.; Rose, P.D.; Jones, G.A.C.; Linfield, E.H.; Ritchie, D.A. // Applied Physics Letters;1/25/1999, Vol. 74 Issue 4, p576 

    Examines electrically active defect centers induced by gallium (Ga[sup+]) focused ion beam irradiation of gallium arsenic (GaAs). Identification of defect centers identified as electron traps lying below the surface state conduction band; Absence of significant surface damage indicative of...

  • Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching. Sugimoto, Y.; Taneya, M.; Hidaka, H.; Akita, K. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2392 

    Studies the damage in gallium (Ga) arsenide induced by Ga[sub+] focused-ion-beam-assisted chlorine etching. Description of the apparatus used in the study; Details on the experiment; Results of the study.

  • Nonlinear deltaf simulation studies of intense ion beam propagation through an... Qian Qian; Wei-li Lee, W. // Physics of Plasmas;May97, Vol. 4 Issue 5, p1915 

    Investigates the detailed stability and transport properties of an intense ion beam propagating through an alternating-gradient focusing lattice with initial Kapchinskij-Vladimirskij (KV) distribution, using perturbative particle simulation techniques. Propagation of KV beam distribution over...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics