TITLE

Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation?

AUTHOR(S)
Schuppler, S.; Adler, D.L.; Pfeiffer, L.N.; West, K.W.; Chaban, E.E.; Citrin, P.H.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2357
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates silicon (Si) atom concentrations occupying arsenic sites in Si-doped gallium arsenide (GaAs) (100). Effect of increasing the Si dopant concentration; Free-carrier concentrations of the sample; Mechanisms contributing to electrical deactivation at high Si doping levels in GaAs.
ACCESSION #
4289491

 

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