TITLE

Etching yields of SiO[sub 2] by low energy CF[sup +, sub x] and F[sup +] ions

AUTHOR(S)
Shibano, Teruo; Fujiwara, Nobuo; Hirayama, Makoto; Nagata, Hitoshi; Demizu, Kiyoshi
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2336
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the plasma etching yields of silicon dioxide by low energy carbon-fluorine[sup +][sub x] and fluorine[sup +] ions. Effect of an increase in the energy ions on the etching yields of SiO[sub 2]; Comparison of the etching yields of CF[sup +][sub 3] and CF[sup +][sub 2] to CF[sup +] and F[sup +] ions; Causes of film deposition.
ACCESSION #
4289484

 

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