TITLE

Strained layer GaAs[sub 1-y]P[sub y]-AlGaAs and In[sub x]Ga[sub 1-x]As-AlGaAs quantum well

AUTHOR(S)
van der Poel, C.J.; Ambrosius, H.P.M.M.; Linders, R.W.M.; Peeters, R.M.L.; Acket, G.A.; Krijn, M.P.C.M.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2312
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of strained layer single quantum well diode lasers by low-pressure organometallic vapor phase epitaxy. Comparison of laser performance under tensile and compressive strain; Strain regions of the material; Evidence for strain dependence of the threshold current of broad area devices.
ACCESSION #
4289476

 

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