Al-Ga interdiffusion through group III-vacancy second nearest-neighbor hopping

Olmsted, B.L.; Houde-Walter, S.N.
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p530
Academic Journal
Examines the impurity-free aluminum-gallium interdiffusion in undoped aluminum gallium arsenide/gallium arsenide superlattice. Growth of samples by molecular beam epitaxy; Arrhenius dependence of the interdiffusion coefficient; Mediation of the process by group III-vacancy nearest-neighbor hopping; Shift of Fermi-level position to valence band.


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