Ultraviolet ozone induced oxidation of epitaxial Si[sub 1-x]Ge[sub x](111)

Agarwal, A.; Patterson, J.K.; Greene, J.E.; Rockett, A.
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p518
Academic Journal
Examines the room temperature utraviolet/ozone-induced oxidation of epitaxial silicon[sub 1-x]germanium[sub x](111) alloy. Use of x-ray photoelectron spectroscopy; Components of the two-phased oxide formed; Segregation of germanium layer at alloy/oxide interface; Dependence of oxidation rate on germanium content.


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