Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/GaAsP

Goossen, K.W.; Cunningham, J.E.; Santos, M.B.; Jan, W.Y.
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p515
Academic Journal
Measures the modulation saturation intensity in strained-balanced indium gallium arsenide/gallium arsenide phosphide (InGaAs/GaAsP) multiple quantum well (MQW) modulators. Comparison with strain-relaxed system in terms of exciton and modulation; Growth of sample by gas-source molecular beam epitaxy; Possibility of using InGaAs/GaAsP to form undefected MQW.


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