TITLE

Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by

AUTHOR(S)
Armstrong, S.R.; Pemble, M.E.; Taylor, A.G.; Fawcette, P.N.; Neave, J.H.; Joyce, B.A.; Zhang, J.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the use of reflectance anisotropy (RA) technique as a probe of the growth of indium arsenide (InAs) on gallium arsenide. Use of molecular beam epitaxy technique for InAs deposition; Information on changes in surface indium concentration; Detection of surface reconstruction changes.
ACCESSION #
4289453

 

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