Low-voltage vertical-cavity transmission modulator for 1.06 mum

Fritz, I.J.; Brennan, T.M.; Hammons, B.E.; Howard, A.J.; Worobey, W.; Vawter, G.A.; Myers, D.R.
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p494
Academic Journal
Describes an all-semiconductor, vertical Fabry-Perot-cavity optical transmission modulator. Use of lattice-mismatched material to achieve operation at 1.06 mum; Modification of the cavity resonant wavelength through transmission-mode operation; Application of the modulator in double-pass operation with a corner-tube retroreflector.


Related Articles

  • Photonic memory switch consisting of multiple quantum well reflection modulator and.... Matsuo, Shinji; Amano, Chikara // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1547 

    Develops a photonic memory switch consisting of multiple quantum well reflection modulator, heterojunction phototransistor (HPT) and distributed Bragg reflector. Illumination of HPT by bias light incident on the modulator; Electrical characteristics of the device; Demonstration of waveform...

  • GaAs-AlAs low-voltage refractive modulator operating at 1.06 μm. Goossen, K. W.; Cunningham, J. E.; Jan, W. Y. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p744 

    We have produced a nonabsorbing surface-normal optical modulator operating at 1.06 μm (e.g., for a high-power Nd-YAG pump laser) which has a relative transmission change of 16% for -1 to 1 voltage swing. The structure is a GaAs-AlAs dielectric mirror with alternating n- and p-type δ doping...

  • Optical modulator provides 5000:1 contrast ratio.  // Laser Focus World;Dec94, Vol. 30 Issue 12, p13 

    Reports on the integration of high-speed normal incidence spatial light modulators with other semiconductor devices by multiple quantum wells (MQW). Use of quantum-confined Stark effects by MQW.

  • Grey scale memory in an optically addressed spatial light modulator with a Lu(Pc)[sub 2] doped layer. Gue´na, M.; Wu, Z. Y.; L’Her, M.; Pondaven, A.; Cadiou, C. // Applied Physics Letters;2/16/1998, Vol. 72 Issue 7 

    An optically addressed spatial light modulator with electrolyte bisphtalocyanine of lutetium incorporated in the alignment layer is shown to be capable of memorizing a grey scale image. The relationship between the memorized grey scale and the illumination is shown. The temperature, the...

  • Electronic analog of the electro-optic modulator. Datta, Supriyo; Das, Biswajit // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p665 

    We propose an electron wave analog of the electro-optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin-orbit coupling in narrow-gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin...

  • Photomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effect. Christofides, Constantinos; Othonos, Andreas; Loizidou, Efi // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1132 

    Photomodulated thermoreflectance measurements were performed at elevated temperatures (294 to 623 K), on crystalline silicon lightly doped with boron. The temperature dependence is qualitatively and quantitatively discussed. The "competition" between thermal and plasma contribution, as a...

  • Photo-generated THz antennas. Georgiou, G.; Tyagi, H. K.; Mulder, P.; Bauhuis, G. J.; Schermer, J. J.; Rivas, J. Gómez // Scientific Reports;1/10/2014, p1 

    Electromagnetic resonances in conducting structures give rise to the enhancement of local fields and extinction efficiencies. Conducting structures are conventionally fabricated with a fixed geometry that determines their resonant response. Here, we challenge this conventional approach by...

  • Low-loss GaAs/AlGaAs waveguide phase modulator using a W-shaped index profile. Deri, R. J.; Kapon, E.; Harbison, J. P.; Seto, M.; Yun, C. P.; Florez, L. T. // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1803 

    We demonstrate a low-loss semiconductor optical waveguide phase modulator for the 1.5 μm wavelength region. The device, based on a p-i-n diode/heterostructure waveguide, utilizes a novel epilayer structure to reduce propagation losses associated with doped electrode layers. Propagation loss...

  • Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs <111> self-electro-optic effect device. Goossen, K. W.; Caridi, E. A.; Chang, T. Y.; Stark, J. B.; Miller, D. A. B.; Morgan, R. A. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p715 

    We have observed room-temperature exciton blue shift with applied voltage in a <111> In0.1Ga0.9As-GaAs p-i-n multiple quantum well modulator. We have also observed optically induced bistability in a symmetric self-electro-optic effect device circuit composed of these modulators. Very large...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics