Electroluminescence at room temperature of a Si[sub n]Ge[sub m] strained-layer superlattice

Engvall, Jesper; Olajos, Janos; Grimmeiss, Hermann G.; Presting, Hartmut; Kibbel, Horst; Kasper, Erich
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p491
Academic Journal
Describes the electroluminescence of Si[sub n]Ge[sub m] strained-layer superlattice. Effect of short circuit photocurrent spectroscopy, voltage- and current-intensity measurements; Temperature dependence of the band gap energy; Involvement of interband recombination transition in eletroluminescence signal.


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