Raman scattering from oval defects in GaAs epilayers

Khulbe, P.K.; Dobal, P.S.; Bist, H.D.; Mehta, S.K.; Muralidharan, R.; Jain, R.K.
July 1993
Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p488
Academic Journal
Investigates the oval defects in epitaxially grown {100} gallium arsenide wafers using micro-Raman spectroscopy technique. Modification in crystalline orientation within the defect structure; Quality of the defects; Deviation in oval defect stoichiometry.


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