TITLE

A uniformity degradation mechanism in rapid thermal chemical vapor deposition

AUTHOR(S)
Ozturk, Mehmet C.; Sanganeria, Mahesh K.; Sorrell, F. Yates
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2697
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the uniformity degradation mechanism in rapid thermal chemical vapor deposition using polycrystalline silicon on silicon dioxide. Use of small temperature variations to initiate degradation; Determination of the absorbed light by the wafer absorptivity of the heat lamp; Analysis of absorptivity as a function of the surface layer thickness.
ACCESSION #
4289416

 

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