A uniformity degradation mechanism in rapid thermal chemical vapor deposition

Ozturk, Mehmet C.; Sanganeria, Mahesh K.; Sorrell, F. Yates
November 1992
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2697
Academic Journal
Examines the uniformity degradation mechanism in rapid thermal chemical vapor deposition using polycrystalline silicon on silicon dioxide. Use of small temperature variations to initiate degradation; Determination of the absorbed light by the wafer absorptivity of the heat lamp; Analysis of absorptivity as a function of the surface layer thickness.


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