Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

Shinoda, K.; Ohta, E.
November 1992
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2691
Academic Journal
Identifies an electron trap from an interstitial carbon-oxygen complex defect in near threshold electron irradiated silicon. Application of deep-level transient spectroscopy; Rationale of the defect formation model; Dependence of the defect level concentration on the electron fluence.


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