TITLE

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

AUTHOR(S)
Detchprohm, T.; Hiramatsu, K.; Amano, H.; Akasaki, I.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2688
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the preparation of single crystalline films of gallium nitride (GaN) by hydride vapor phase epitaxy using a zinc oxide (ZnO) buffer layer. Properties of GaN; Similarities of ZnO properties with GaN; Measurement of the Hall mobility and carrier concentrations of GaN films.
ACCESSION #
4289413

 

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