TITLE

Residual strain analysis of In[sub x]Ga[sub 1-x]As/GaAs heteroepitaxial layers

AUTHOR(S)
Krishnamoorthy, V.; Lin, Y.W.; Calhoun, L.; Liu, H.L.; Park, R.M.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2680
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the residual strain analysis of In[sub x]Ga[sub 1-x]As/gallium arsenide heteroepitaxial layers. Application of the high resolution X-ray diffraction technique; Dependence of the residual strain on the epilayer composition and thickness; Relation between the extent of lattice relaxation and epilayer composition.
ACCESSION #
4289410

 

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