Low-temperature Si/Si[sub 1-x]Ge[sub x]/Si heterostructure growth at high Ge fractions by

Schutz, Reiner; Murota, Junichi; Maeda, Takahiro; Kircher, Roland; Yokoo, Kuniyoshi; Ono, Shoichi
November 1992
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2674
Academic Journal
Investigates the growth of a silicon (Si)/Si[sub 1-x]Ge[sub x]/Si heterostructure at high Ge fractions by low-pressure chemical vapor deposition. Use of SiH[sub 4] and GeH[sub 4] gases; Prevention of island growth during deposition; Observation of surface roughness by scanning electron and tunneling microscopy.


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