TITLE

Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor

AUTHOR(S)
Nakata, Jyoji; Taniguchi, Moriyuki; Takahei, Kenichiro
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2665
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the metalorganic chemical vapor deposition (MOCVD) grown erbium (Er) doped gallium arsenide (GaAs) by the Rutherford backscattering channeling method. Factors attributed to the remarkable peak of the doped Er ions; Comparison of energy peak shifts in varying spectra; Localization of Er atoms in the MOCVD-grown GaAs host.
ACCESSION #
4289405

 

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