High energy carbon ions implantation: An attempt to grow diamond inside copper

Zhang, Z.H.; Chow, L.; Paschke, K.; Yu, N.; Tao, Y.K.; Matsuishi, K.; Meng, R.L.; Hor, P.; Chu, W.K.
November 1992
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2650
Academic Journal
Demonstrates carbon ion implantation into single-crystal copper. Use of RBS-channeling measurements to examine the regrowth of the radiation-damaged copper; Temperature required for the occurrence of carbon segregation; Analysis of the buried carbon layer by Raman scattering.


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