TITLE

High energy carbon ions implantation: An attempt to grow diamond inside copper

AUTHOR(S)
Zhang, Z.H.; Chow, L.; Paschke, K.; Yu, N.; Tao, Y.K.; Matsuishi, K.; Meng, R.L.; Hor, P.; Chu, W.K.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2650
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates carbon ion implantation into single-crystal copper. Use of RBS-channeling measurements to examine the regrowth of the radiation-damaged copper; Temperature required for the occurrence of carbon segregation; Analysis of the buried carbon layer by Raman scattering.
ACCESSION #
4289400

 

Related Articles

  • Irradiation damage of single crystal, coarse-grained, and nanograined copper under helium bombardment at 450 °C. Han, Weizhong; Fu, E.G.; Demkowicz, Michael J.; Wang, Yongqiang; Misra, Amit // Journal of Materials Research;Oct2013, Vol. 28 Issue 20, p2763 

    The irradiation damage behaviors of single crystal (SC), coarse-grained (CG), and nanograined (NG) copper (Cu) films were investigated under Helium (He) ion implantation at 450 °C with different ion fluences. In irradiated SC films, plenty of cavities are nucleated, and some of them...

  • Ion implantation.  // Design Engineering;May96, p17 

    Focuses on ion implantation, a surface treatment which is said to extend tooling life, cut downtine and improve production quality. Features; Process description.

  • Plasma immersion ion implantation of the interior surface of a large cylindrical bore using an... Zeng, X.C.; Kwok, T.K.; Liu, A. G.; Chu, P. K.; Tang, B. Y. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p44 

    Studies plasma immersion ion implantation (PIII) of the interior surface of a large cylindrical bore by using an auxiliary electrode. What is the source of the PIII; Discussion and results of the study; Investigation of a sheath expansion into a cylindrical bore with an auxiliary electrode.

  • Advances in ion implanter productivity and safety. Romig, Terry; McManus, Jim // Solid State Technology;Dec96, Vol. 39 Issue 12, p69 

    Examines the impact of advanced dopant delivery systems on ion implanter productivity and safety. Comparison between conventional dopant source materials and a new atmospheric pressure SDS Gas source; How SDS Gas source works; Adsorption forces; Adsorbents; Delivery methodology; Productivity...

  • Ion implantation, yesterday and today. Rose, Peter H. // Solid State Technology;May97, Vol. 40 Issue 5, p129 

    Traces the evolution of the ion implantation process. Bell Laboratories' use of the ion implantation process in the 1950s; Dose versus energy diagram showing the growth of applications of ion implantation with time; Schematic illustration of the flat panel handling in the Orion NV6072 machine.

  • Implantation damage and transient enhanced diffusion modeling. Giles, Martin D.; Shaofeng Yu; Kennel, Harold W.; Packan, Paul A. // Solid State Technology;Feb98, Vol. 41 Issue 2, p97 

    Presents experimental results that provide insight to damage generation and annealing processes involved in ion implantation. Transient enhanced diffusion across multiple anneals; Dopant redistribution and solubility effects; Practical modeling approaches to support technology development.

  • Chrome plating alternative harder. Proctor, Paul // Aviation Week & Space Technology;6/6/1994, Vol. 140 Issue 23, p17 

    Reports on plasma source ion implantation technique (PSII) under development at the Los Alamos National Laboratory in New Mexico. Possibility of having more durable and longer-lasting machinery parts; Viability as alternative to chrome plating.

  • Optical characteristics of LiNbO3 implanted with Au+ ions. Shang, D.Y.; Matsuno, H. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p406 

    Studies the optical characteristics of LiNbO3 implanted with Au+ ions at energy of 23 keV. Production of metal ions in the ion source; Peak of the absorption spectra of as-implanted samples.

  • Principles and characteristics of a new generation plasma immersion ion implanter. Chu, P.K.; Tang, B.Y.; Cheng, Y.C.; Ko, P.K. // Review of Scientific Instruments;Apr97, Vol. 68 Issue 4, p1866 

    Describes the design, fabrication and installation of a multipurpose plasma immersion ion implanter in the City University of Hong Kong. Design principles; Characteristics and operating principles.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics