TITLE

Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by

AUTHOR(S)
Seghier, D.; Gislason, H.P.
PUB. DATE
October 1997
SOURCE
Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2295
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of the interface on the electrical properties of zinc selenide/gallium arsenide heterojunctions grown by molecular beam epitaxy. Observation of reverse current-voltage (I-V) characteristics on the heterojunction; Range of temperature used in the study; Measurement of the I-V and alternating current conductance.
ACCESSION #
4284559

 

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