Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by

Seghier, D.; Gislason, H.P.
October 1997
Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2295
Academic Journal
Examines the effect of the interface on the electrical properties of zinc selenide/gallium arsenide heterojunctions grown by molecular beam epitaxy. Observation of reverse current-voltage (I-V) characteristics on the heterojunction; Range of temperature used in the study; Measurement of the I-V and alternating current conductance.


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