Band-offset determination for GaInP-AlGaInP structures with compressively strained quantum well

Dawson, Martin D.; Duggan, Geoffrey
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p892
Academic Journal
Examines the heterojunction band-offset for gallium indium phosphide and aluminum gallium indium phosphide structures with compressively strained quantum well active layers. Use of photoluminescence excitation spectroscopy; Observation of a split between energy heavy- and light-hole excitonic transition; Correlation between the splitting behavior and band offset.


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