TITLE

Reactive ion etching of GaN using BCl[sub 3]

AUTHOR(S)
Lin, M.E.; Fan, Z.F.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p887
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the reactive ion etching of gallium nitride (GaN) films using BCl[sub 3] and SiCl[sub 4] chemistry. Growth of GaN film by plasma enhanced molecular beam epitaxy; Effect of gas chemistry, flow rate and microwave power on etch rate; Use of Auger electron spectroscopy to investigate surface of GaN film following etching.
ACCESSION #
4284461

 

Related Articles

  • Room-temperature photoenhanced wet etching of GaN. Minsky, M.S.; White, M. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1531 

    Presents the laser-enhanced, room temperature wet etching of gallium nitride. Measurement of the etch rates of a few hundred angstrom per minute for hydrochloride; Evidence for the photochemical nature of the etching; Characterization of electrolytes.

  • Highly anisotropic photoenhanced wet etching of n-type GaN. Youtsey, C.; Adesida, I. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2151 

    Describes a photoelectrochemical etching process for n-type gallium nitride films. Use of potassium hydroxide and mercury arc lamp illumination; Provision of highly anisotropic etch profiles and high etch rates; Characterization of the etch rate and photocurrent.

  • Fabrication of GaN suspended microstructures. Strittmatter, R. P.; Beach, R. A.; McGill, T. C. // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3226 

    We report on a versatile processing technology for the fabrication of micro-electromechanical systems in gallium nitride (GaN). This technology, which is an extension of photo-electrochemical etching, allows for the controlled and rapid undercutting of p-GaN epilayers. The control is achieved...

  • Characteristics of chemically assisted ion beam etching of gallium nitride. Adesida, I.; Ping, A.T. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p889 

    Investigates the characteristics of the chemically-assisted ion beam etching (CAIBE) of gallium nitride. Application of an argon (Ar) ion beam in a chloride (Cl[sub 2]) ambient; Comparison of etching rates between Cl[sub 2] and Ar-etched samples; Influence of higher substrate temperatures on...

  • Low resistance ohmic contacts on wide band-gap GaN. Lin, M.E.; Ma, Z. // Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1003 

    Examines the metal contacts on gallium nitride using titanium, aluminum and gold. Application of the metallization process for low resistance ohmic contacts; Deposition of the metals via electron-beam evaporation; Investigation of the metallurgy of contact formation by Auger electron spectroscopy.

  • Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching. Spradlin, J.; Dogan, S.; Mikkelson, M.; Huang, D.; He, L.; Johnstone, D.; Morkoç, H.; Molnar, R. J. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3556 

    KOH etch was investigated as a means to improve the I-V characteristics of Schottky diodes on n-type GaN grown by molecular-beam epitaxy on sapphire, or on hydride vapor phase epitaxy templates. Atomic force microscopy images and I-V characteristics are presented. After etching as-grown films in...

  • Nanoheteroepitaxy of GaN on a nanopore array Si surface. Liang, J.; Hong, S.-K.; Kouklin, N.; Beresford, R.; Xu, J. M. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1752 

    We report the growth by molecular beam epitaxy and the optical characterization of GaN films nucleated on a Si(111) surface that has been patterned by dry etching an ordered array of nanometer-scale pores prior to the growth. The etching is performed using an anodized aluminum oxide membrane as...

  • Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures. Wang, Y. D.; Zang, K. Y.; Chua, S. J. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054306 

    Ordered GaN nanostructures, i.e., nanopore and nanodot arrays, have been demonstrated by combining a nonlithographic nanopatterning technique and nanoscale selective epitaxial growth. Hexagonal-close-packed nanopore arrays were fabricated in GaN surfaces and SiO2 surfaces on GaN films by...

  • Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates. Pan, Chang-Chi; Hsieh, Chi-Hsun; Lin, Chih-Wei; Chyi, Jen-Inn // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p084503 

    GaN-based epilayers are grown on wet-etched stripe-patterned sapphire substrates, with stripes along the <11-20>sapphire and <1-100>sapphire directions, for 400 nm ultraviolet light-emitting diodes (LEDs). The effects of the etching depth and stripe orientation on the structural and optical...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics