Reactive ion etching of GaN using BCl[sub 3]

Lin, M.E.; Fan, Z.F.
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p887
Academic Journal
Describes the reactive ion etching of gallium nitride (GaN) films using BCl[sub 3] and SiCl[sub 4] chemistry. Growth of GaN film by plasma enhanced molecular beam epitaxy; Effect of gas chemistry, flow rate and microwave power on etch rate; Use of Auger electron spectroscopy to investigate surface of GaN film following etching.


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