Device model for pulsing in silicon p-i-n structures

Perera, A.G.U.; Matsik, S.
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p878
Academic Journal
Describes the modeling of spontaneous pulsing patterns in silicon p-i-n diodes. Use of device physics and circuit parameters as bases for modeling; Importance of the model in providing insights on pulsing rate sensitivity to device and circuit parameters; Impact of designing uniform arrays on infrared detector and neural net model application.


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