TITLE

Device model for pulsing in silicon p-i-n structures

AUTHOR(S)
Perera, A.G.U.; Matsik, S.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p878
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the modeling of spontaneous pulsing patterns in silicon p-i-n diodes. Use of device physics and circuit parameters as bases for modeling; Importance of the model in providing insights on pulsing rate sensitivity to device and circuit parameters; Impact of designing uniform arrays on infrared detector and neural net model application.
ACCESSION #
4284458

 

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