Reduced threshold all-optical bistability in etched quantum well microresonators

Rivera, T.; Ladan, F.R.
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p869
Academic Journal
Observes the all-optical bistability in gallium arsenide/aluminum gallium arsenide quantum well microresonators. Fabrication of the device by two-step SiCl[sub 4] reactive ion etching process; Use of organometallic vapor-phase epitaxy for cavity growth; Influence of lateral carrier and light confinement on bistability threshold power.


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