Large scale surface structure formed during GaAs (001) homoepitaxy

Orme, C.; Johnson, M.D.
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p860
Academic Journal
Investigates the formation of large scale surface structure during epitaxial growth of gallium arsenide (001) films. Use of atomic force microscopy; Dependence of multilayered structural evolution on island nucleation and presence of step edge barrier; Implications of growth progression in step-flow mode for multilayered mound formation.


Related Articles

  • Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy. Yang, K.; Schowalter, L.J. // Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1851 

    Describes the surface reconstruction phases of gallium arsenide (111) B substrates grown by molecular beam epitaxy. Use of reflection high-energy electron diffraction pattern; Determination of equation for boundaries separating reconstruction phase zones; Dependence of surface morphology and...

  • Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas-source.... Asahi, H.; Hisaka, T. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1054 

    Investigates the influence of hydrogen on the step flow growth of gallium arsenide (GaAs) on the vicinal surfaces by gas-source migration enhanced epitaxy. Analysis of the reflection high-energy electron diffraction intensity oscillation; Advantage of using AsH[sub 3] over solid As; Factors...

  • Air stabilized (001) p-type GaAs fabricated by molecular beam epitaxy with reduced surface state.... Yan, D.; Look, E. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p186 

    Investigates undoped/p-type gallium arsenide (GaAs) structures fabricated by molecular beam epitaxy with reduced surface state density. Rationale for the temperature dependence of the measured barrier height; Changes in the surface defect nature; Observation of Fermi level pinning at values...

  • Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth. Krishnamurthy, M.; Wassermeier, M.; Williams, D.R.M.; Petroff, P.M. // Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1922 

    Investigates the formation and evolution of quasiperiodic microfacets on vicinal gallium arsenide(110) surfaces grown by molecular beam epitaxy. Application of transmission electron microscopy and Monte Carlo simulations; Factors attributing to microfacet formation; Time evolution of facet...

  • Band bending and interface states for metals on GaAs. Viturro, R. E.; Shaw, J. L.; Mailhiot, C.; Brillson, L. J.; Tache, N.; McKinley, J.; Margaritondo, G.; Woodall, J. M.; Kirchner, P. D.; Pettit, G. D.; Wright, S. L. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2052 

    We have used soft x-ray photoemission and optical emission spectroscopies to observe a broad range of Fermi level stabilization energies at metal interfaces with GaAs(100) surfaces grown by molecular beam epitaxy (MBE). The observed metal- and As-related interface cathodoluminescence plus...

  • Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular.... Homma, Yoshikazu; Yamaguchi, Hiroshi // Applied Physics Letters;1/1/1996, Vol. 68 Issue 1, p63 

    Compares the surface morphology of gallium arsenide with the migration enhanced epitaxy (MEE) and molecular beam epitaxy. Use of in situ scanning electron microscopy; Factors affecting the high quality epitaxial layer; Sensitivity of secondary electron surface to surface morphology;...

  • Saturation of the surface field with external bias for metalorganic chemical vapor deposition epilayer GaAs/GaAs as determined by electroreflection spectroscopy. Poras, Henry; Goldsmith, George J.; Pan, Noren // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5484 

    Presents a study which examined the strength of the surface field on gallium arsenide epitaxial layers of various thickness and doping concentrations grown by metalorganic chemical vapor deposition on a semi-insulating gallium arsenide substrate. Theoretical considerations; Experimental methods...

  • Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities. Ashby, Carol I. H.; Zavadil, Kevin R.; Baca, Albert G.; Chang, P.-C.; Hammons, B. E.; Hafich, M. J. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    An air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only...

  • A comparative study of Si doping in GaAs layers grown by molecular beam epitaxy on GaAs(110) and GaAs(001) surfaces. Zhou, T. C.; Zhou, X. C.; Kirk, W. P. // Journal of Applied Physics;6/1/1997, Vol. 81 Issue 11, p7372 

    A comparison of Si doping behavior in GaAs layers on (110) and (001) surfaces under the same growth conditions shows that the autocompensation ratio in (110) layers is usually higher than in (001) layers. However, under certain conditions (low substrate temperature, high As[sub 4] pressure, and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics