TITLE

Large scale surface structure formed during GaAs (001) homoepitaxy

AUTHOR(S)
Orme, C.; Johnson, M.D.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p860
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the formation of large scale surface structure during epitaxial growth of gallium arsenide (001) films. Use of atomic force microscopy; Dependence of multilayered structural evolution on island nucleation and presence of step edge barrier; Implications of growth progression in step-flow mode for multilayered mound formation.
ACCESSION #
4284452

 

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