TITLE

Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor

AUTHOR(S)
Eckel, M.; Ottenwalder, D.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p854
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the properties of two indium precursors with respect to selectivity and variation of composition of selectively grown gallium indium arsenide layers. Use of metalorganic vapor phase epitaxy for structural growth on partially masked substrate; Differentiation between the two sources related to masked area nucleation.
ACCESSION #
4284450

 

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