Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor

Eckel, M.; Ottenwalder, D.
February 1994
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p854
Academic Journal
Investigates the properties of two indium precursors with respect to selectivity and variation of composition of selectively grown gallium indium arsenide layers. Use of metalorganic vapor phase epitaxy for structural growth on partially masked substrate; Differentiation between the two sources related to masked area nucleation.


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