TITLE

Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency

AUTHOR(S)
Klehr, A.; Muller, R.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p830
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the gigahertz switching dynamics of polarization-bistable ridge-waveguide-indium gallium arsenic phosphide/indium phosphide laser. Modulation of injection current; Difference among the types of emission behaviors; Occurrence of stochastic modal switching at high modulation amplitude; Dependence of modulation amplitude on switching frequency.
ACCESSION #
4284441

 

Related Articles

  • Experimental observation of time jitter in semiconductor laser turn-on. Spano, P.; D’Ottavi, A.; Mecozzi, A.; Daino, B. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2203 

    We report an experimental study which shows how time jitter in semiconductor lasers, which arises when such sources are switched from below to above threshold, is related to the actual operating conditions. The effect is observed both in distributed feedback and in Fabry–Perot lasers,...

  • Femtojoule optical switching in nonlinear semiconductor laser amplifiers. Sharfin, W. F.; Dagenais, M. // Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p321 

    We have demonstrated the operation of an optical switch requiring less than 1 f J (<7000 photons) of incident optical energy. The switch operates at room temperature, is compatible with optical communication systems, and is cascadable because it has gain. The switching times (on and off) are...

  • Limitations on ultrafast optical switching in a semiconductor laser amplifier operating at... Kao, Y.-H.; Xia, T. J. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4740 

    Presents information on a study which examined the ultrafast optical switching in a semiconductor laser amplifier (SLA) at transparency current under a strong pump condition. Cross-polarized pump-probe experiments; Experimental results for ultrafast switching in SLA; Coupled propagation equations.

  • Monolithic QW laser beam steering and wavelength tunability. Zakariya, Abdullah; LiKamWa, Patrick // Optical & Quantum Electronics;Feb2014, Vol. 46 Issue 2, p331 

    We demonstrate a monolithic tunable laser on a QW structure by integrating an optical beam steering section with an area-selectively intermixed QW gain section. Wavelength switching is achieved by steering the laser beam over an optical gain medium that consists of two laterally adjacent quantum...

  • Analysis of Gain-Switching in Two-Section Tapered Lasers. ADAMIEC, P.; TIJERO, J. M. G.; ESQUIVIAS, I. // Acta Physica Polonica, A.;Nov2013, Vol. 124 Issue 5, p888 

    We analyze the gain-switching dynamics of two-section tapered lasers by means of a simplified three-rate-equation model. The goal is to improve the understanding of the underlying physics and to optimize the device geometry to achieve high power short duration optical pulses.

  • Passively Q-switching induced by the smallest single-walled carbon nanotubes. Xu, X. T.; Zhai, J. P.; Wang, J. S.; Chen, Y. P.; Yu, Y. Q.; Zhang, M.; Li, I. L.; Ruan, S. C.; Tang, Z. K. // Applied Physics Letters;4/28/2014, Vol. 104 Issue 17, p1 

    We report a passively Q-switched erbium-doped fiber laser (EDFL) by using the smallest single-walled carbon nanotubes (SWNTs) with a diameter of 0.3 nm as the saturable absorber. These small SWNTs are fabricated in the nanochannels of a ZnAPO-11 (AEL) single crystal. By inserting one of the AEL...

  • Generalized adjoint for physical processes with parameterized discontinuities. Part IV: Problems... Xu, Quin // Journal of the Atmospheric Sciences;12/1/97, Vol. 54 Issue 23, p2722 

    Presents information on the physical processes with parameterized discontinuities while focusing on the parameterized on and off switches which are triggered at a discrete time levels by threshold condition in a numerical model. What the response and costfunction contains; Causes of the...

  • Analysis of the far-field output angle scanning by injection locking of a diode laser array. Weber, Jean-Pierre; Wang, Shyh // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1719 

    We present a linear theory to explain the experimentally observed emission angle scanning of an injection-locked diode laser array when the frequency of the injected light is changed. This theory is based on eigenmode analysis of the coupled waveguides and on the use of the antenna array theory...

  • V-grooved inner-stripe laser diodes on a p-type substrate operating over 100 mW at 1.5 μm wavelength. Horikawa, H.; Oshiba, S.; Matoba, A.; Kawai, Y. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p374 

    An output power of 110 mW cw has been achieved with a V-grooved inner-stripe laser diode on a p-type substrate emitting at 1.5 μm wavelength. Output powers over 100 mW could be obtained by determining the appropriate cavity length and the reflectivity of the front mirror facet, a parameter...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics