Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

Koshiba, S.; Noge, H.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p363
Academic Journal
Examines the fabrication of a ridge quantum wire structure on a patterned gallium arsenide (GaAs) substrate. Method of structure growth with sharp ridge and GaAs thin film deposition; Use of electron microscopy in determining nanowire formation; Indication of luminescence line origin through photoluminescence and cathodoluminescence measurements.


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