Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant

Klatt, J.; Kruger, D.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p360
Academic Journal
Examines the boron-controlled solid phase epitaxy of germanium (Ge) layers on silicon. Use of reflection high-energy electron diffraction, ion mass spectroscopy and transmission electron microscopy; Effect of boron on Ge surface energy anisotropy; Impact of Ge non-segregating property on growth process islanding.


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