TITLE

Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide

AUTHOR(S)
Wei-Ming Chen; Jengping Lin
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p345
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of submicron p-metal-semiconductor-oxide field-effect transistors. Use of cobalt silicide as diffusion source for p-junction formation and doping source for amorphous silicon gate; Effect of as-deposited amorphous silicon on CoSi[sub 2] thermal stability; Role of fabrication in eliminating metal-oxide semiconductor process implants.
ACCESSION #
4284416

 

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