TITLE

High quality aluminum nitride epitaxial layers grown on sapphire substrates

AUTHOR(S)
Saxler, A.; Kung, P.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p339
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of aluminum nitride (AlN) epitaxial layers on sapphire substrates. Difference in crystalline growth between AlN on (00.2) and (01.2) sapphire; Role of AlN x-ray crystallography in determining arcsec value; Application of ultraviolet transmission spectroscopy in absorption edge measurement; Effect of thermal mismatch on crystallinity quality.
ACCESSION #
4284414

 

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