Intensity dependence of photoluminescence in GaN thin films

Singh, R.; Molnar, R.J.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p336
Academic Journal
Examines the intensity dependence of photoluminescence in gallium nitride films. Use of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy; Identification of linear and nonlinear luminescence dependency on light intensity; Difference in recombination center voltage density between data and recombination model.


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