TITLE

Formation of beta-SiC nanocrystals by the relaxation of Si[sub 1-y]C[sub y] random alloy layers

AUTHOR(S)
Powell, A.R.; LeGoues, F.K.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p324
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of beta-SiC nanocrystals by the relaxation of Si[sub 1-y]C[sub y] random alloy layers. Application of tensile strain on layer growth; Achievement of strain relaxation by dislocation formation at annealing temperatures; Influence of nanocrystal production in mesoscopic phenomena exploration.
ACCESSION #
4284408

 

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