Formation of beta-SiC nanocrystals by the relaxation of Si[sub 1-y]C[sub y] random alloy layers

Powell, A.R.; LeGoues, F.K.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p324
Academic Journal
Examines the formation of beta-SiC nanocrystals by the relaxation of Si[sub 1-y]C[sub y] random alloy layers. Application of tensile strain on layer growth; Achievement of strain relaxation by dislocation formation at annealing temperatures; Influence of nanocrystal production in mesoscopic phenomena exploration.


Related Articles

  • Phonons as probes in self-organized SiGe islands. Groenen, J.; Carles, R. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3856 

    Proposes the use of phonons as probes in self-organized silicon germanide islands grown on silicon. Composition of the alloy in the islands; Use of phonon frequencies in determining residual strains in the islands; Relaxation of strained islands.

  • Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films. Kurova, I. A.; Ormont, N. N.; Gromadin, A. L. // Semiconductors;Feb2003, Vol. 37 Issue 2, p131 

    The effect of illumination on the isothermal relaxation of slow photoinduced metastable defects (metastable electrically active impurity atoms) in boron-doped a-Si:H films has been studied. It was established that, under illumination, the kinetics of relaxation of these metastable defects is...

  • Strain relaxation and compensation due to annealing in heavily carbon-doped GaAs. Hanna, M.C.; Majerfeld, A.; Szmyd, D.M. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p2001 

    Examines the strain relaxation and compensation due to annealing in heavily carbon-doped GaAs. Significance of short anneals of heavily doped GaAs:C; Recommendation on the device structure requiring heavily C-doped GaAs layers; Presence of an upper limit in annealed GaAs:C.

  • Degrees of visible determinism in crystal growth striations as a measure of crystal quality. Miyano, Takaya; Morita, Hiroshi; Shintani, Akira; Kanda, Tadashi // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p43 

    A diagnostic test based on the parallelism of neighboring trajectories generated from a time series in phase space for visible determinism is applied to characterizing complexities in growth striations of Czochralski silicon crystals. Change in the structure of the striations by crystal...

  • Formation of nanodomain ensembles during polarization reversal in SrBaNbO: Ce single crystals. Shur, V.; Shikhova, V.; Pelegov, D.; Ievlev, A.; Ivleva, L. // Physics of the Solid State;Nov2011, Vol. 53 Issue 11, p2311 

    The results of the study of nano- and microdomain structure evolution in single crystals of relaxor ferroelectric strontium barium niobate SrBaNbO doped by cerium are presented. It was shown that the initial nanodomain structure represents a self-similar three-dimensional maze. The fractal...

  • Structural relaxation and nanoindentation response in Zr–Cu–Ti amorphous thin films. Chou, H. S.; Huang, J. C.; Chang, L. W.; Nieh, T. G. // Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p191901 

    Ternary Zr–Cu–Ti system, especial with a high Ti content, is normally difficult to be fully vitrified. In this paper, we demonstrate that cosputtering can produce amorphous Zr–Cu–Ti thin films with an excessive Ti content even as high as 19%. Sub-Tg annealing of the...

  • A neutron backscattering study of lattice deformations in silicon due to SiO2 precipitation. Magerl, A.; Schneider, J. R.; Zulehner, W. // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p533 

    Deals with a study which investigated the annealing of Czochralski-grown dislocation free silicon crystals for times varying between 20 and 216 h. Factors that open new possibilities for investigations of oxygen precipitation in silicon crystals; Area in which Czochralski-grown dislocation-free...

  • Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate. Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p182120 

    Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO2 has been investigated as a function of Ge fraction (0%–100%) and annealing temperature (320–550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high...

  • Deactivation kinetics of supersaturated boron:silicon alloys. Luo, Weiwei; Yang, Shenzhi; Clancy, Paulette; Thompson, Michael O. // Journal of Applied Physics;9/1/2001, Vol. 90 Issue 5 

    The effect of laser annealing on the electrical activity of boron-doped silicon wafers has been investigated as a function of boron concentration, annealing time, and annealing temperature (from 600 °C to 1050 °C). Metastable supersaturated alloys were produced by the laser annealing of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics