Analysis of normal-incident absorption in a proposed p-type very-narrow-quantum-well infrared

Man, P.; Pan, D.S.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p321
Academic Journal
Examines the normal-incident absorption in a p-type narrow-quantum-well infrared photodetector. Use of direct transitions between heavy and light hole-like subbands in structures; Impact of overlap integrals of envelope functions on infrared absorption; Advantage of narrow quantum wells in photodetector performance.


Related Articles

  • Absorption in p-Si[sub 1-x]Ge[sub x] quantum well detectors. Robbins, D.J.; Stanaway, M.B. // Applied Physics Letters;3/20/1995, Vol. 66 Issue 12, p1512 

    Measures p-Si1-xGex/Si quantum well absorption in normal incidence. Importance of quantum well infrared photodetectors; Use of Drude conductivity; Effect of the reduction of ionized impurity scattering.

  • Quantum well infrared photodetection induced by interband pumping. Berger, V.; Rosencher, E.; Vodjdani, N.; Costard, E. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p378 

    Presents a model of quantum well infrared photodetector. Optical injection of electrons by interband absorption; Control of photodetector by near-infrared pump beam; Use of coupled quantum wells to increase carrier lifetime and photoinduced electron density.

  • Mid-infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures. Hasnain, G.; Levine, B. F.; Sivco, D. L.; Cho, A. Y. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p770 

    Medium wavelength infrared (MWIR) detectors in the 3–5 μm band are demonstrated using bound to continuum state intersubband absorption in lattice-matched InGaAs/InAlAs multiquantum well (MQW) structures. Photodetectors with responsivity peaked at 4 μm wavelength showed low dark...

  • High-speed measurement of the response time of a GaAs/AlxGa1-xAs multiquantum-well long-wavelength infrared detector. Bethea, C. G.; Levine, B. F.; Hasnain, G.; Walker, J.; Malik, R. J. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p963 

    Reports on the measurement of the response time of a GaAs/Al[subx]Ga[sub1-x]As multiquantum well infrared detector. Data on the absorption spectrum measured at room temperature;Technique used to measure the high-speed response of the infrared detectors; Diagram of the response time experiment.

  • Photoabsorption in n-type Si-SiGe quantum-well infrared photodetectors. Shadrin, V.D.; Coon, V.T.; Serzhenko, F.L. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2679 

    Examines the photoabsorption spectra of silicon-silicon germanide (Si-SiGe) quantum-well (QW) infrared photodetectors. Observation of lower dark current in Si-SiGe QW detectors; Superiority of Si-SiGe over GaAs-AlGaAs QW detectors; Comparison of absorption peak shift induced by...

  • Optical absorption coefficients of semiconductor quantum-well infrared detectors. Fu, Y.; Willander, M.; Xu, Wenlan // Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4648 

    Describes a study which examined the optical absorption coefficients of semiconductor quantum-well infrared detectors using quantum perturbation theory. Effect of different doping concentrations; General consideration of optical transition; Optical transition between mini-bands.

  • Photoemission of Si 1s→2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection. Antoni, Thomas; Carras, Mathieu; Marcadet, Xavier; Vinter, Borge; Berger, Vincent // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042102 

    Intersubband absorption in a GaAs/AlGaAs quantum well usually happens between two two-dimensional (2D) electronic states. However for sufficiently low doping levels, the electrons can be entirely distributed on the silicon localized states. We demonstrate that depending on the temperature,...

  • Exchange interaction effects in quantum well infrared detectors and absorbers. Choe, J.-W.; O, Byungsung; Bandara, K. M. S. V.; Coon, D. D. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1679 

    Infrared excitation energies between the ground-state subband and the first excited-state subband in quantum wells are analyzed including the effect of exchange interactions on the ground-state subband. Analytic and numerical calculations relevant to infrared absorption and infrared detection...

  • Two-color GaAs/(AlGa)As quantum well infrared detector with voltage-tunable spectral sensitivity.... Kheng, K.; Ramsteiner, M. // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p666 

    Presents measurements on a GaAs:Si/(AlGa)As quantum well intersubband detector structure. Dependence of the photoresponse on bias voltage; Description of the detector structure; Similarity between frequency dependence of the theoretical absorption to calculated photoconductive responsivity.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics