TITLE

Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source

AUTHOR(S)
He, Z.Q.; Ding, X.M.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p315
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of gallium nitride (GaN) on gallium arsenide(100). Application of the molecular beam epitaxy using reactive nitrogen source; Detection of crystalline epilayer structure using x-ray diffraction; Use of the C-V technique to measure epilayer carrier concentration; Effect of nitride gas ionization on GaN epilayer quality.
ACCESSION #
4284405

 

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