Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source

He, Z.Q.; Ding, X.M.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p315
Academic Journal
Examines the growth of gallium nitride (GaN) on gallium arsenide(100). Application of the molecular beam epitaxy using reactive nitrogen source; Detection of crystalline epilayer structure using x-ray diffraction; Use of the C-V technique to measure epilayer carrier concentration; Effect of nitride gas ionization on GaN epilayer quality.


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