Time dependence of dopant diffusion in delta-doped Si films and properties of Si points defects

Gossmann, H.-J.; Rafferty, C.S.
January 1994
Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p312
Academic Journal
Examines the diffusion of antimony and boron in thin silicon (Si) films. Use of delta-doped Si films grown by low temperature molecular beam epitaxy; Estimation of vacancy diffusivity, vacancy formation energy and interstitial-vacancy recombination under device fabrication; Depiction of interstitial and vacancy population interaction at low temperature.


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