Cycling endurance of silicon-oxide-nitride-oxide-silicon nonvolatile memory stacks prepared with

Habermehl, S.; Nasby, R.D.; Rightley, M.J.
August 1999
Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1122
Academic Journal
Studies the effects of nitrided SiO[sub 2]/Si interfaces on cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory transistors. Cycling degradation as a manifestation of interface trap generation at the tunnel oxide/silicon interface; Comparison of the endurance of SONOS film stacks prepared with nitrided and non-nitrided oxides.


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