TITLE

Cycling endurance of silicon-oxide-nitride-oxide-silicon nonvolatile memory stacks prepared with

AUTHOR(S)
Habermehl, S.; Nasby, R.D.; Rightley, M.J.
PUB. DATE
August 1999
SOURCE
Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1122
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the effects of nitrided SiO[sub 2]/Si interfaces on cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory transistors. Cycling degradation as a manifestation of interface trap generation at the tunnel oxide/silicon interface; Comparison of the endurance of SONOS film stacks prepared with nitrided and non-nitrided oxides.
ACCESSION #
4283547

 

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