TITLE

Manipulation of elementary charge in a silicon charge-coupled device

AUTHOR(S)
Fujiwara, Akira; Takahashi, Yasuo
PUB. DATE
March 2001
SOURCE
Nature;3/29/2001, Vol. 410 Issue 6828, p560
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports on the manipulation of an elementary charge in a silicon charge-coupled device. The use of metal-oxide-semiconductor field-effect-transistors (MOSFET); Creation of this device from two closely packed silicon-wire MOSFET.
ACCESSION #
4281697

 

Related Articles

  • A New Leakage Power Reduction Technique for CMOS VLSI Circuits. Geetha Priya, M.; Baskaran, K.; Krishnaveni, D.; Srinivasan, S. // Journal of Artificial Intelligence;2012, Vol. 5 Issue 4, p227 

    A robust method which is equally effectual for static power control in CMOS VLSI circuits for System on Chip (Soc) applications in deep submicron technologies proposed. Referring to the International Technology Roadmap for Semiconductors (ITRS), the total power dissipation may be significantly...

  • Digitally managed power circuits. Cleveland, Terry // EDN;10/25/2007, Vol. 52 Issue 22, p59 

    The article deals with the integration of digital features into power circuits. Among the digital features are host communications, output-voltage/current programming, and fault diagnostics and management. Analog components and features include metal-oxide semiconductor field-effect transistor...

  • Second Generation CoolMOS Improves on Previous Generation's Characteristics.  // Power Electronics Technology;Nov2010, Vol. 36 Issue 11, p9 

    The article focuses on a second generation metal-oxide-semiconductor field-effect transistor (MOSFET) called CoolMOS which reportedly has improved characteristics of the first generation. It states that the second generation MOSFET reduces specific resistance by a factor of five compared with...

  • Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors. Yang, Xiaodong; Choi, Younsung; Lim, Jisong; Nishida, Toshikazu; Thompson, Scott // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014511 

    Changes in the gate direct tunneling current in the accumulation layer and in the inversion layer are measured for tensile strained n-channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a polysilicon gate and a TaN gate on (100) silicon wafers. The observed decrease of the...

  • Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors. Prati, Enrico; Fanciulli, Marco; Ferrari, Giorgio; Sampietro, Marco // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p123707 

    We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs). A giant drain current fluctuation ΔI/I up to 55% is observed at sub-Kelvin...

  • Evidence for ballistic transport of two-dimensional electron gas at liquid-nitrogen temperatures.... Takeuchi, Kan; Hisamoto, Dai // Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1776 

    Investigates the transconductance of silicon metal-oxide semiconductor field effect transistors (MOSFET). Evidence for ballistic transport of two-dimensional electron gas; Presence of scattering structures in interface states; Factors influencing the transconductance of MOSFET.

  • Effective masses of holes in non-(001) ultrathin Si layers. Kajikawa, Y. // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063712-1 

    We investigate the effects of crystallographic orientation on the quantization masses and the in-plane masses of valence subbands in ultrathin layers of Si within a six-band effective-mass theory. In order to provide physical insight on the difference in the quantum-confinement effects on these...

  • Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors. Wang, W.; Deng, J.; Hwang, J. C. M.; Xuan, Y.; Wu, Y.; Ye, P. D. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072102 

    Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n-channel inversion-mode metal-oxide-semiconductor field-effect transistor (MOSFET). By analyzing the charge pumped under gate voltage pulses of different rise and fall times, the interface trap...

  • Improved MOSFET Model Achieves Higher Accuracy. Pearson, Scott; Tran, Sylvie; Sapp, Steven // Power Electronics Technology;Jan2007, Vol. 33 Issue 1, p14 

    The article provides information on the improved SPICE model developed by Fairchild Semiconductor Corp. engineers in the U.S. It has been developed for the simulation of trench power devices using the BSIM3 MOSFET model. It is claimed that the new SPICE model offers excellent correlation to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics