Study of the first-stage relaxation in ZnTe/(001)CdTe strained layers

Eymery, J.; Tatarenko, S.
June 1994
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3631
Academic Journal
Analyzes the growth of highly strained zinc tantalum on (001) cadmium tellurium by reflection high-energy electron diffraction analysis. Effect of Zn excess pressure on the critical thickness; Evolution of the lattice mismatch with ZnTe thickness; Mechanism of layer growth.


Related Articles

  • Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures. Prévot, I.; Vinter, B.; Marcadet, X.; Massies, J. // Applied Physics Letters;10/28/2002, Vol. 81 Issue 18, p3362 

    Indium surface segregation is evidenced in real time by reflection high-energy electron diffraction (RHEED) during the molecular beam epitaxial growth of AlSb on InAs(Sb). The resulting interface width is determined from the RHEED specular beam intensity variation during the growth. It extends...

  • Real-time investigation of In surface segregation in chemical beam epitaxy of.... Mesrine, M.; Massies, J. // Applied Physics Letters;6/17/1996, Vol. 68 Issue 25, p3579 

    Investigates the surface segregation of Ga[sub 0.5]In[sub 0.5]P/GaAs heterostructures by chemical beam epitaxy. Use of reflection high energy electron diffraction to evaluate the surface segregation process; Correlation between the incorporation rate of gallium and surface content of indium;...

  • Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted.... Schweizer, T.; Kohler, K. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p469 

    Examines the electrical properties of Al[sub 0.3]Ga[sub 0.7]As/In[sub x]Ga[sub 1-x]As modulation doped heterostructures grown on gallium arsenide substrates. Comparison between the transport properties of normal and inverted heterostructures; Use of reflection high energy electron diffraction;...

  • Remark to the Intensity Measurement of RHEED. Nemcsics, Á.; Olde, J.; Geyer, M.; Reshöft, K. // Instruments & Experimental Techniques;Sep/Oct2005, Vol. 48 Issue 5, p679 

    In this work, the intensity measurement of RHEED is carried out directly with the help of a Faraday cup that is described here. We are dealing with the behavior of oscillation intensity damping in the case of InGaAs/GaAs heterostructure.

  • RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures. Nechaev, D.; Jmerik, V.; Mizerov, A.; Kop'ev, P.; Ivanov, S. // Technical Physics Letters;May2012, Vol. 38 Issue 5, p443 

    Results of statistical analysis of the patterns of reflection high-energy electron diffraction (RHEED) measured during molecular beam epitaxy (MBE) of heterostructures of wide-bandgap (Al, Ga, In)N compounds are presented, which can be used for determining the lateral lattice constant ( a) of...

  • Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers. Belenky, G.; Donetsky, D.; Kipshidze, G.; Wang, D.; Shterengas, L.; Sarney, W. L.; Svensson, S. P. // Applied Physics Letters;10/3/2011, Vol. 99 Issue 14, p141116 

    Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the...

  • Anomalous thickness and dopant effects on photochemical deposition of Ag on epitaxial TiO2(110)/Nb:TiO2(110) heterostructures. Abe, T.; Ohsawa, T.; Katayama, M.; Koinuma, H.; Matsumoto, Y. // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p061928 

    The authors have found anomalous thickness and dopant effects on photochemical deposition of Ag on the epitaxial heterostructures of TiO2(110) and V:TiO2(110)/Nb:TiO2(110). The photodeposition of Ag on TiO2(110)/Nb:TiO2(110) is limited to a specific film thickness region of about 5 nm and the V...

  • InAs nanowire formation on InP(001). Parry, H. J.; Ashwin, M. J.; Jones, T. S. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114305 

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400–480...

  • Epitaxial growth of (111)-oriented spinel CoCr2O4/Al2O3 heterostructures. Liu, Xiaoran; Choudhury, D.; Cao, Yanwei; Middey, S.; Kareev, M.; Meyers, D.; Kim, J.-W.; Ryan, P.; Chakhalian, J. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    High quality (111)-oriented CoCr2O4/Al2O3 heterostructures were synthesized on the sapphire (0001) single crystal substrates by pulsed laser deposition. The structural properties are demonstrated by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics