TITLE

Influence of strain on interfacial recombination in AlGaInP/GaInP double heterostructures

AUTHOR(S)
Domen, K.; Kondo, M.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3629
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the carrier-recombination process in strained aluminum-gallium-indium phosphide (AlGaInP)/GaInP double heterostructures using photoluminescence. Influence of strain on the carrier-recombination process; Dependence of the inverse of lifetime on strain; Factors affecting the nature of the interfacial defects.
ACCESSION #
4278312

 

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