TITLE

High-resolution x-ray characterization of low-temperature GaAs/As superlattice grown by

AUTHOR(S)
Cheng, T.M.; Chang, C.Y.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3626
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the high-resolution x-ray characterization of low-temperature (LT) gallium arsenide (GaAs)/As superlattice grown by molecular beam epitaxy. Evolution of the x-ray rocking curves; Provision of the semi-insulating property of LT material; Formation of the GaAs/As superlattice structure.
ACCESSION #
4278310

 

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