TITLE

Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent

AUTHOR(S)
Christiansen, S.; Albrecht, M.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3617
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the three-dimensional finite element method (3D-FEM) of growth islands and the convergent beam electron diffraction measurements of the strained state in germanium(silicon). Calculation of the strained state; Reliability of 3D-FEM as a tool for calculating the strain; Purpose of developing 3D-FEM.
ACCESSION #
4278307

 

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